Interfacial Properties of Silicon Structures Fabricated by Vacuum Grooved Surface Bonding Technology

概要

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The paper presents a novel modification of a direct bonding technology. A presented innovation is aimed at fabricating void free interfaces with a low defect density. For this purpose the bonding boundaries are manufactured as grooved, and the bonding annealing is performed under vacuum conditions. It has been found that the grooves act as dislocation traps. A trapped gas escapes through the grooves which facilitates the void removal. By X-ray and electron diffraction techniques the grooves have been observed to flatten rapidly. The electrical properties of the grooved interfaces are as good as those of diffusion p-n junctions.
社団法人応用物理学会の論文
1998-12-15