Design Considerations of GaInNAs-GaAs Quantum Wells: Effects of Indium and Nitrogen Mole Fractions

概要

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The influences of In and N compositions on the optical gain characteristics of a GaInNAs-GaAs single quantum well are studied theoretically for the first time. When compared with GaInAs, GaInNAs shows a higher optical gain and a longer emission wavelength, under the condition of identical strain. For a given operating wavelength, the higher-In GaInNAs quantum well exhibits a larger optical gain and a smaller carrier leakage than the higher-N GaInNAs quantum well. For example, more than a two-fold improvement in threshold current is expected from the higher-In Ga_%lt;0.6>In_%lt;0.4>N_%lt;0.01>As_%lt;0.99> quantum well laser than the higher-N Ga_%lt;0.75>In_%lt;0.25>N_%lt;0.02>As_%lt;0.98> quantum well laser operating at 1.3 μm.
社団法人応用物理学会の論文
1998-11-15