Evaluation of Free Energy on Si(110) Surface

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概要

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• Scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED) are used to estimate the generation probability of the (17,15,l)2×l step and the domain size of the "16×2" structure at room temperature. From both studies, the area size of the "16×2" structure along the <111> direction is deduced to be about 50nm. Therefore, the generation probability of the (17,15,1)2×1 step is estimated to be 0.1-0.2. From the estimated values, the free energy increase per unit length of the (17,15,1)2×1 step δF is estimated to about 1.8×10^<-13> (J/m).

• 社団法人応用物理学会の論文
• 1998-10-15

著者

• YAMAMOTO Youiti

  JEOL Ltd.

関連論文

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• Scanning Tunneling Microscopy Study of the 16-Structure Appearing on a Si(110) Surface
• Evaluation of Free Energy on Si(110) Surface
• Measurement of Terrace Width Distribution on an Si(110) Surface Using High-Temperature Scanning Tunneling Microscopy
• Superstructures Induced by Ni Adsorption on a Clean Si(110) Surface Studied by Reflection High-Energy Electron Diffraction-Total Reflection Angle X-Ray Spectroscopy

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