Metal Alloy Characteristics in Rapid Thermal Process System Using a Tungsten Halogen Lamp
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概要
- 論文の詳細を見る
A rapid thermal processing (RTP) system operated below 500℃ has been designed and constructed. It uses an optical pyrometer for measuring wafer temperature, in the sensing range from 2.0 μm to 2.4 μm. To remove the interference effect of IR emitted from lamps, an IR filter which uses water is adopted. The electrical characteristics of an alloy after RTP are superior to those of an alloy processed in a conventional furnace, from in the viewpoint of junction spiking, contact resistance and pn diode characteristics. The optimal RTP conditions for aluminium alloy is 425℃ for 10 s. The reverse leakage current (at V = 5V) after RTP decreases from 44.9 nA/cm^2 to 29.3 nA/cm^2 in the p^+n diode. Also, in the n^+p diode, the leakage current decreases from 122pA/cm^2 to 85.3pA/cm^2.
- 社団法人応用物理学会の論文
- 1998-03-15
著者
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Choi Jin-ho
Department Of Computer Engineering Pusan University Of Foreign Studies
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Lee Dong-Youb
Department of Electrical Engineering, Kyungju Junior College
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