An X-Ray Stress Measurement Method for Very Small Areas on Single Crystals

概要

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We realized measurement of stresses existing in very small areas on single crystals using an X-ray beam 60 μm in diameter. No such stress measurement has been feasible in the past because conventional measurement methods customarily use a polycrystalline powder material as a reference sample. Diffracted X-rays from a powder sample are weak and a long exposure time is required to obtain a diffraction pattern. Moreover, if the diameter of the X-ray beam is reduced, it is difficult to obtain a continuous diffraction ring. We thought of using a single crystal as a reference sample and eventually succeeded in measuring stresses in very small areas. We also examined the measurement precision of this method. As for the medium of recording X-ray diffraction patterns, we employed an imaging plate and tried to shorten the measurement time. We also clarified that high-precision stress measurements can be performed, even with the imaging plate. As a result, we were able to measure stresses in a silicon single crystal with an X-ray beam of 60 μm diameter in 16 min of exposure time.
社団法人応用物理学会の論文
1997-09-15