Rectification of the Diffusion Equations Proposed for Point Defects in Si Crystals during Melt Growth

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概要

• 論文の詳細を見る

• The author previously proposed diffusion equations which describe diffusion behavior of point defects in Si crystal growth ends during melt growth. The author would like to correct the mistakes made during the derivation of the diffusion equations, starting from the phenomenological diffusion equations.

• 社団法人応用物理学会の論文
• 1997-05-15

著者

• Habu Ryuichi

  Technical Research Center Sky Aluminum Co. Ltd.

• HABU Ryuichi

  Technical Research Center SKY Aluminum Co., Ltd.

関連論文

• Ostwald growth of Fe_3C and Distributions of Carbon Atoms in α-iron Annealed Under a Constant Temperature Gradient
• Diffusion Equation for Solute Atoms under a Temperature Gradient
• Rectification of the Diffusion Equations Proposed for Point Defects in Si Crystals during Melt Growth
• Heat of Transfer for Carbon in Iron-Carbon System

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