Propagation Characteristics of Surface Acoustic Waves in KNbO_3/SrTiO_3/Si Layered Structures

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概要

• 論文の詳細を見る

• The propagation characteristics of surface acoustic waves (SAWs) in KNObO_3/SrTiO_3/Si structures were investigated theoretically. Phase velocities (v_p) decrease when the hK value of the SrTiO_3 buffer layer increases from 0.04 to 0.2 for a specified thickness of the KNbO_3 film. The value of the coupling coefficient (K^2) can be as high as 10%. A layered structure with the interdigital transducer (IDT) located on top of the KNbO_3 film is a better choice for device fabrication if we select a coupling coefficient of 1% as a reference for comparison. The results could provide useful information for combining optical devices, semiconductor devices and SAW devices on the same Si substrate.

• 社団法人応用物理学会の論文
• 1997-04-15

著者

• Shih W‐c

  Tatung Inst. Technol. Taipei Twn

• Shih Wen-ching

  Department Of Electrical Engineering Tatung Institute Of Technology

• WU Mu-Shiang

  Department of Electrical Engineering, Tatung Institute of Technology

• Wu M‐s

  Tatung Inst. Technol. Taipei Twn

• Wu Mu-shiang

  Department Of Electrical Engineering Tatung Institute Of Technology

関連論文

• Propagation Characteristics of Surface Acoustic Waves in KNbO_3/SrTiO_3/Si Layered Structures
• Effect of a Buffer Layer on the Surface Acoustic Wave Characteristics of Pb(Zr, Ti)O_3 Film/Buffer Layer/Semiconductor Substrate Structures
• Theoretical Study of Surface Acoustic Wave Propagation on KNbO_3/MgO/GaAs Layered Structures

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