Theoretical Investigation on Silicon-Nitride Film Growth: Statistical Approach
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概要
- 論文の詳細を見る
The dependence of SiN_x film growth on the initial energy was investigated theoretically using a statistical model based on nonempirical molecular orbital results. Our theoretical calculations successfully explain the experimental finding that it is easier to control the ratio of Si-N and Si-Si bond yields when a mixture of SiH_2Cl_2 and NH_3 rather than that of SiH_4 and NH_3 is used as the source gas.
- 社団法人応用物理学会の論文
- 1997-10-15
著者
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Fujimura Yuichi
Department Of Chemistry Graduate School Of Science Tohoku University
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Ishitani Akihiko
Association Of Super-advanced Electronics Technologies (aset)
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Ishitani Akihiko
Association Of Super-advanced Electronic Technologies
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Koseki S
Chemistry Department For Materials Faculty Of Engineering Mie University
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Koseki Shiro
Chemistry Department For Materials Faculty Of Engineering Mie University
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