Sol-Gel Derived Pb(Zr,Ti)O_3 Thin Films: Effects of PbTiO_3 Interlayer

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概要

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• Pb(Zr,Ti)O_3 films with PbTiO_3 interlayers between the film and Pt/Ti/SiO_2/Si(100) substrate were fabricated by using a sol-gel spin-on process. Effects of the PbTiO_3 interlayer on the phase formation and electrical properties were investigated. A thin PbTiO_3 interlayer of about 0.05 μm is required to effectively enhance the perovskite formation of the Pb(Zr,Ti)O_3 films, while a thicker PbTiO_3 interlayer limits the perovskite formation. The glass-to-pyrochlore transformation is not significantly influenced by the PbTiO_3 interlayer. Doping of La into the PbTiO_3 interlayer elevates the perovskite formation temperature. The characteristics related to morphotropic phase boundary of the films are significantly weakened by the PbTiO_3 interlayer. The fatigue behavior of the films is generally improved by the PbTiO_3 interlayer. It is suggested that atomic diffusion between the Pb(Zr,Ti)O_3 film and PbTiO_3 interlayer influences the observed electrical properties.

• 社団法人応用物理学会の論文
• 1996-07-15

著者

• Lee Po-chien

  Department Of Materials Engineering Tatung Institute Of Technology

• SHYU Jiin-Jyh

  Department of Materials Engineering, Tatung Institute of Technology

• Shyu Jiin-jyh

  Department Of Materials Engineering Tatung Institute Of Technology

関連論文

• Sol-Gel Derived Pb(Zr,Ti)O_3 Thin Films: Effects of PbTiO_3 Interlayer
• Preparation and Properties of Sol-Gel Derived La-Doped PbTiO_3 Thin Films

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