Transient Voltage-Induced Leakage Current in Power Diode with Semi-Insulating Polycrystalline Silicon Resistive Field Plate

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概要

• 論文の詳細を見る

• Leakage current of a power diode was found to flow at a much lower voltage than that of avalanche breakdown under the conditions of high voltage rise rate (dV/dt) and low frequency, and this leakage current was characteristic of a semi-insulating polycrystalline silicon (SIPOS) resistive field plate (RFP). This current, which we call transient voltage-induced leakage current (TVIC), has not been reported previously. TVIC can be suppressed by optimizing the reduced surface field (RESURF) structure. The electric charge for TVIC increased as both the applied voltage and the pulse time interval increased, whereas it decreased as the temperature increased. A possible model to explain the TVIC mechanism was presented.

• 社団法人応用物理学会の論文
• 1996-05-15

著者

• Yahata Akihiro

  Materials And Devices Labs. Toshiba Research And Development Center

• Atsuta Masaki

  Materials And Devices Labs. Toshiba Research And Development Center

関連論文

• Transient Voltage-Induced Leakage Current in Power Diode with Semi-Insulating Polycrystalline Silicon Resistive Field Plate

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