Damped Longitudinal Optical Phonon-Hole Plasmon Modes in p-Type GaAs
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概要
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The effect of substantial plasmon damping on the frequencies and damping rates of the coupled longitudinal optical (LO) phonon-hole plasmon modes is examined by finding the complex roots of ε(ω) = 0. The zeroes of the dielectric function ε(ω) give the frequencies of the longitudinal modes. The calculated results describe the anomalous downward shift and the single-mode behavior that we have observed previously for Raman spectra of the coupled modes in p-type GaAs.
- 社団法人応用物理学会の論文
- 1996-01-15
著者
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FUKASAWA Ryoichi
Department of Electro-Photo-Optics Engineering, Tokai University
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Perkowitz S
Emory Univ. Georgia Usa
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Perkowitz Sidney
Department Of Physics Emory University
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Fukasawa Ryoichi
Department Of Physics Emory University:(present Address)kansai Advanced Research Center Communicatio
関連論文
- Far-Infrared Reflectance Study of Coupled Longitudinal-Optical Phonon-Hole Plasmon Modes and Transport Properties in Heavily Doped p-Type GaAs
- Raman Scattering Determination of Free Carrier Concentration and Surface Depletion Layer in (100) p-GaAs Grown by Molecular-Beam Epitaxy
- Damped Longitudinal Optical Phonon-Hole Plasmon Modes in p-Type GaAs