Characterization of InSb Interface with Oxide Films

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概要

• 論文の詳細を見る

• Metal insulator semiconductor (MIS) structures on InSb substrate, grown by an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system, were studied. A high quality oxide film, deposited on the InSb substrate by ECR-CVD, was achieved. The minimum interface state density (min N_<ss>) value of 4×10^<11> cm^<-2> eV^<-1> was obtained. Auger electron spectroscopy (AES) and electron spectroscopy for chemical analysis (ESCA) were employed to clarify the MIS structure of these oxide films. It was found that the interface region between SiO_2 and the InSb surface was wider for lower values of the surface state density and that the reduction occurred at the InSb surface during the deposition of SiO_2.

• 社団法人応用物理学会の論文
• 1996-01-15

著者

• Tanaka Yasuhiro

  Research And Development Group Japan Energy Corporation

• Takahashi Kenji

  Research And Development Group Japan Energy Corporation

• ONOZUKA Arata

  Research and Development Group, Japan Energy Corporation

• Onozuka Arata

  Research And Development Group Japan Energy Corporation

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• Characterization of InSb Interface with Oxide Films

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