Growth and Characterization of CeO_2 Films on Sapphire Substrates by Sputtering Process

概要

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Two-inch-diameter CeO_2 films on R-plane (11^^-02)sapphire substrates have been prepared using an on-axis rf magnetron sputtering method. The effects of postannealing treatment, sputtering gas pressure and substrate temperature on the orientation, crystallinity and surface morphology of the CeO_2 films have been investigated. The (100)-preferred CeO_2 films with high crystallinity are grown at 820℃ and 0.15 Torr and have a full width at half-maximum value of the rocking curve of (200) planes of 0.15°. The spatial variation of thickness of the CeO_2 films across the 2-inch substrate is about 5.8%. The c-axis oriented YBa_2Cu_3O_x (YBCO) films grown on sapphire substrates with a (100)-preferred CeO_2 buffer layer of 100 nm are made. The YBCO films have superconducting properties with the T_c being 88-90 K and J_c (77 K, 0T) being (1-3) × 10^6 A/cm^2.
社団法人応用物理学会の論文
1996-11-15