Ion Bombardment Effect on Hydrogen Content in Boron Thin Films Prepared by Electron Cyclotron Resonance Discharge of Diluted Decaborane Gases
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概要
- 論文の詳細を見る
Boron thin films are prepared by electron cyclotron resonance discharge of decaborane gas diluted with helium gas. The dependence of the hydrogen content in the films on the bias voltage V_B applied to substrates is investigated at the substrate temperature of 200℃. The hydrogen content are 2-3 at.% at V_B=100-200 V, 6-11 at.% at V_B=300 V and 9.3 at.% at V_B=500 V. The bombardment of the ions with energies more than 300 V during the deposition increases the hydrogen content in the boron thin films.
- 社団法人応用物理学会の論文
- 1995-12-15
著者
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Ito Yoshifumi
Department Of Electromagnetic Energy Engineering Faculty Of Engineering Osaka University
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Nishikawa Masahiro
Department Of Biology Graduate School Of Natural Science Konan University
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Nishikawa Masahiro
Department Of Electromagnetic Energy Engineering Faculty Of Engineering Osaka University
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