Detection and Identification of Near-Surface Microprecipitates in Silicon Wafers by Laser Scattering Tomography

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概要

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• A nondestructive measurement system for characterizing near-surface (0 to 100 μm) microprecipitates in silicon wafers using laser scattering tomography has been developed. A near-infrared laser beam (λ=1 μm) is focused to about 4 μm in diameter and introduced into the wafer from an inclined direction through the polished surface. The scattered light is also observed from the polished side. The scattered light has a complicated signal, because the scattered light from the near-surface microdefects, that from the haze related to the surface microroughness, and that from the dust on the surface are mixed. By using a polarization analysis method, the scatterings from the haze, dust and microdefects are clearly distinguished. The scattering from the subsurface (0 to 5 μm) region is also identified as that due to dust and microprecipitates by using a short-wavelength laser (λ=680 nm).

• 社団法人応用物理学会の論文
• 1995-10-15

著者

• YAZAKI Akio

  Materials and Structures Laboratory, Tokyo Institute of Technology

• Yazaki Akira

  Materials And Structures Laboratory Tokyo Institute Of Technology

• Hirai Katsuyuki

  Corporate R&d Center Mitsui Kinzoku

• Moriya K

  Gifu Univ. Gifu Jpn

• MORIYA Kazuo

  Corporate R&D Center, Mitsui Kinzoku

• YAZAKI Akira

  Corporate R&D Center, Mitsui Kinzoku

• MORIYA Kazuo

  Corporate R&D Center, Mitsui Kinzoku

関連論文

• Picosecond Time-Resolved X-Ray Diffraction of a Photoexcited Silicon Crystal (Short Note)
• Picosecond Time-Resolved X-Ray Diffraction from Si(111) under High-Power Laser Irradiation
• Detection and Identification of Near-Surface Microprecipitates in Silicon Wafers by Laser Scattering Tomography

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