Monte Carlo Simulation of Ion Bombardment at Low Glancing Angles

概要

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Monte Carlo simulations were applied to the incident ion trajectories for coarse viewing of ion-target interaction in the finishing stage of focused ion beam (FIB) cross sectioning, i.e., typically, 30 keV Ga ion bombardment of Si and W targets at low glancing angle β. Basic physical parameters of backscattering yield, energy distribution and deposited energy of the backscattered ions, and ion depth distribution are obtained as functions of β. The backscattering yields sharply increase toward 1 with decrease of β to 0, especially for a W target. The energy distributions of backscattered ions reflect the ion deceleration behavior near the surface. Such behavior is consistent with that indicated by the results of ion depth distributions. Basic properties such as ion depth, damage depth, Ga concentration, and the cross-sectional tilt angle of the FIB-milled cross sections are discussed using the basic physical parameters mentioned above.
社団法人応用物理学会の論文
1995-06-15