Relative Errors of Free-Carrier Density at Different Temperatures Calculated from Approximations for the Fermi-Dirac Integral

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概要

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• We present the relative errors of the free-carrier concentration in a semiconductor at all temperatures associated with three different approximations for the Fermi-Dirac integral of the order of 1/2. The results suggest that the errors peak at around 200 K and decrease outside this temperature range for all three doping concentrations considered (10^&t;18>, 10^<19>, and 10^<20>cm^<-3>).

• 社団法人応用物理学会の論文
• 1995-05-15

著者

• Liou Juin

  Department Of Electrical And Computer Engineering University Of Central Florida

• Ortiz-conde Adelmo

  Department Of Electrical And Computer Engineering University Of Central Florida:dpto. De Electronica

• Yue Yun

  Department of Electrical and Computer Engineering, University of Central Florida

関連論文

• Relative Errors of Free-Carrier Density at Different Temperatures Calculated from Approximations for the Fermi-Dirac Integral

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