Low-Damage and Smooth Etching of GaAs by Using a Neon Ion Beam

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概要

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• The irradiation damage to a GaAs etched by an ion beam was experimentally investigated by using different inert gases such as argon and neon. Etching damage was evaluated by measuring the current-voltage (I-V) characteristics of Schottky diodes fabricated on the etched surfaces. Surface roughness was observed by replica transmission electron microscopy. The I-V curve of a diode fabricated on an Ar-etched surface was found to be much more degraded than that of one on an Ne-etched surface. The Ne-etched surface was also found to be smoother than the Ar-etched surface. The reflectance of LD etched mirrors fabricated by both Ne and Ar ion beam etching was measured to examine the etched sidewall striation. The reflectance of Ne-etched mirror was 0.22 and that of the Ar-etched mirror was 0.07, whereas the ideal reflectance for a cleaved facet is 0.32. Ne ion beam etching can thus produce smoothly etched surfaces and sidewalls with low damage at a practical etch-rate.

• 社団法人応用物理学会の論文
• 1995-04-15

著者

• Uenishi Yuji

  Ntt Interdisciplinary Research Laboratories

関連論文

• AlGaAs/GaAs Micromachining for Monolithic Integration of Micromechanical Structures with Laser Diodes
• Low-Damage and Smooth Etching of GaAs by Using a Neon Ion Beam

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