Surface Morphology and Crystallite Size during Growth of Hydrogenated Microcrystalline Silicon by Plasma-Enhanced Chemical Vapor Deposition

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概要

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• The correlation between the surface morphology and the crystallite size during growth of hydrogenated microcrystalline silicon (μc-Si:H) has been discussed using spectroscopic UV-visible phase-modulated ellipsometry, Raman spectroscopy and atomic force microscope (AFM). Through the deposition study of μc-Si:H on Corning 7059 glass and Cr substrates from SiH_4 highly diluted in H_2 and layer-by-layer (LbL) technique by plasma-enhanced chemical-vapor deposition (PECVD), we found that the surface roughness during μc-Si:H growth strongly influenced the creation of the crystallite phase and the relaxation of Si network. The ion bom bardment induces surface roughness and decreases the crystallinity in μc-Si:H growth. The LbL technique using H_2 plasma promotes the nucleation and coalescence processes in the early stage of μc-Si:H growth.

• 社団法人応用物理学会の論文
• 1995-02-15

著者

• Shirai Hajime

  Saitama Univ. Saitama Jpn

• Shirai Hajime

  Saitama University Faculty Of Engineering

関連論文

• Surface Morphology and Crystallite Size during Growth of Hydrogenated Microcrystalline Silicon by Plasma-Enhanced Chemical Vapor Deposition
• Numerical Calculation of Magneto-Seebeck Coefficient of Bismuth under a Magnetic Field

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