An Optical Study of Interdiffusion in Strained InP-Based Heterostructures

概要

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The interdiffusion behavior of In_<1-x>Ga_xAs_<1-y>P_y/In_<1-x'>Ga_<x'>As_<1-y'>P_<y'> multiple quantum well heterostructures with varied built-in strain and layer thicknesses, has been investigated by monitoring their photoluminescence (PL) properties. All samples annealed at 850℃, have consistently exhibited a blueshift of the heavy hole exciton line as a result of atoms interdiffusion across the heterointerfaces. A quantitative analysis of their PL spectra permitted to deduce the following important characteristics of the interdiffusion process: (i) From the data on a nearly strain-compensated structure with constant P/As ratio and In-rich wells, studied here for the first time, we show that the blueshift of the excitonic line is consequent of group III atoms interdiffusion alone, like in GaAs/GaAlAs system, and the In-Ga interdiffusion can be described with a diffusion coefficient D_<In-Ga>〓4.72×10^<-16> cm^2/s; (ii) In the case of lattice matched and compressively-strained structures, a simultaneous interdiffusion on group III and V sublattices has been assumed to yield an effective interdiffusion coefficient ranging from 3.83 to 5.51×10^<-16> cm^2/s.
社団法人応用物理学会の論文
1995-01-15