Deposition Characteristics and Properties of SiO_2 Films Prepared by Reactive Sputtering in Hydrogen-, Oxygen- and Nitrogen-Argon Mixtures (<Special Issue> Plasma Processing)

概要

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Films are deposited by reactive sputtering in hydrogen-, oxygen- and nitrogen-argon mixtures from an SiO_2 target in order to obtain device quality SiO_2 films at low temperature. Deposition characteristics and film properties of SiO_2 films sputtered in the mixtures are examined. Oxygen and nitrogen mixing with the sputtering gas leads to a large decrease in deposition rate compared with argon-only sputtering gas and hydrogen mixing. The SiO_2 film properties of the etching rate in BHF solution, surface morphology and resistivity are found to be greatly affected by mixing these gases with sputtering gas. Mixing of oxygen and a small amount of hydrogen provides excellent SiO_2 films, whose properties are superior to thermally grown films, even at low temperatures. These SiO_2 films have been used to successfully fabricate silicon electronic devices. The effects of mixing the reactive gases with the sputtering gas are also discussed qualitatively through plasma-surface interaction on growing film surfaces.
社団法人応用物理学会の論文
1994-07-30