Photoluminescence Study of GaAs Grown on (001) Si
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概要
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The optical properties of GaAs epilayers grown by organometallic vapour phase epitaxy (OMVPE) on (001)Si substrates are reported. Low-temperature photoluminescence (PL) indicated that an increase in GaAs layer thickness led to an increase in PL intensity, a decrease in the full width at half-maximum (FWHM) of the excitonic transitions and an increase in the ratio of the exciton to carbon impurity peak heights. A comparison of PL spectra, obtained from layers grown on nominally (001) and 2° off (001) Si substrates, indicated that the carbon impurity concentration is higher in epitaxial layers grown on nominally (001) Si. PL studies also indicated that the optical quality of the top GaAs epilayer is critically dependent on the growth parameters of the nucleation layers. The best PL response (i.e., greatest intensity, smallest FWHM and lowest impurity concentration) was obtained from layers in which the initial Al_glt;0.2>Ga_<0.8>. As nucleation layer was deposited at a low V/III ratio of 10. It was also shown in this study that postgrowth thermal annealing and the incorporation of AlGaAs/GaAs superlattices resulted in a dramatic improvement in the optical quality of GaAs/Si epilayers.
- 社団法人応用物理学会の論文
- 1994-11-15