Thermally Induced Precipitation of Silicon Carbide in a Semiconductor Matrix-Application to Nanoparticle Fabrication

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概要

• 論文の詳細を見る

• In this work the Si_<1-y>C_y random alloy is used as a starting point for the creation of nano particles of β-SiC with the same lattice orientation as the Si lattice in which they are grown. These nano particles are between 3 and 8 nm in diameter and are randomly dispersed throughout the Si_<1-y>C_y region, where 0.005<y<0.05. This ability to produce quantum antidots of wide bandgap material within the Si matrix should enable the exploration of mesoscopic phenomena.

• 社団法人応用物理学会の論文
• 1994-04-30

著者

• Powell Adrian

  Ibm Research Division T. J. Watson Research Center

• Iyer Subramanian

  Sibond. L.l. C. Hudson Valley Research Park

• Iyer Subramanian

  Sibond L. L. C. Hudson Valley Research Park

• LEGOUES Francoise

  IBM Research Division, T. J. Watson Research Center

• EK Bruce

  IBM Research Division, T. J. Watson Research Center

• Ek Bruce

  Ibm Research Division T. J. Watson Research Center

• Legoues Francoise

  Ibm Research Division T. J. Watson Research Center

関連論文

• Silicon-Germanium-Carbon Alloys Extending Si Based Heterostructure Engineering
• Thermally Induced Precipitation of Silicon Carbide in a Semiconductor Matrix-Application to Nanoparticle Fabrication

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