Silicon-Germanium-Carbon Alloys Extending Si Based Heterostructure Engineering

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概要

• 論文の詳細を見る

• SiGe epitaxial growth on Si has been of interest for a number of years. In this work we consider the addition of 1 to 6% Cinto both Si and SiGe epitaxial material. We have used a solid, and a gas source, (acetylene), within a solid source SiGe molecular beam epitaxy system to produce a C flux. We have produced high-crystalline-quality Si_<1-y>C_y and Si_<1-x-y>Ge_xC_y material using both approaches. In addition we demonstrate strain-symmetrical short-period superlattice structures grown on (100) Si with high Ge compositions ranging from 20% up to 100% Ge, at 100% Ge the Ge/Si_<1-y>C_y superlattice has an interface mismatch of 7%.

• 社団法人応用物理学会の論文
• 1994-04-30

著者

• Powell A

  Ibm Research Division T. J. Watson Research Center

• POWELL Adrian

  IBM Research Division, T. J. Watson Research Center

• IYER Subramanian

  SiBond, L. L. C. Hudson Valley Research Park

• Powell Adrian

  Ibm Research Division T. J. Watson Research Center

• Iyer Subramanian

  Sibond L. L. C. Hudson Valley Research Park

関連論文

• Silicon-Germanium-Carbon Alloys Extending Si Based Heterostructure Engineering
• Thermally Induced Precipitation of Silicon Carbide in a Semiconductor Matrix-Application to Nanoparticle Fabrication

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