Time-Resolved Optically Detected Magnetic Resonance of Luminescence from Si/Si_<1-x>Ge_x Superlattices

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概要

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• Time-resolved optically detected magnetic resonance (TR-ODMR) experiments have been performed on Si/Si_<1-x>Ge_x superlattices grown by molecular beam epitaxy (MBE) on (001) Si. These structures exhibit a single, broad (full width at half-maximum amplitude 〜70 meV) photoluminescence (PL) band with peak energy 100 meV below the expected band gap. Fast (τ≤5 μs) and slow (τ≃20 μs) processes have been separated with the TR-ODMR. The slow resonances are new and provide more detailed information on the nature of the recombination. These features are tentatively assigned to Ge-rich regions in the Side layers based on the resonance parameters and the faster spin-lattice relaxation.

• 社団法人応用物理学会の論文
• 1994-04-30

著者

• THOMPSON Phillip

  Naval Research Laboratory

• GODBEY David

  Naval Research Laboratory

• GLASER Evan

  Naval Research Laboratory

• KENNEDY Thomas

  Naval Research Laboratory

• KLEIN Paul

  Naval Research Laboratory

関連論文

• Parametric Investigation of Si_Ge_x/Si Multiple Quantum Well Growth
• Time-Resolved Optically Detected Magnetic Resonance of Luminescence from Si/Si_Ge_x Superlattices

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