High Temperature (77-300 K) Photo- and Electroluminescence in Si/Si_<1-x>Ge_x Heterostructures

スポンサーリンク

概要

• 論文の詳細を見る

• The photo- and electro-luminescence of strained Si_<1-x>Ge_x/Si heterostructures on Si(100) substrates from 77 K to 300 K has been investigated both experimentally and by quantitative modelling. The key experimental features are very broad linewidths and an exponential drop in the luminescence at high temperatures, with a larger Ge fraction corresponding to a higher temperature before the drop begins. These phenomena were accurately explained by an electron-hole plasma from high carrier densities in the quantum well and by an excessively low effective lifetime in the silicon cladding region.

• 1994-04-30

著者

• Sturm James

  Department Of Electrical Engineering Photonic And Opto-electronic Materials Center (poem) Princeton

• AMOUR Anthony

  Department of Electrical Engineering, Photonic and Opto-Electronic Materials Center (POEM), Princeton University

• MI Qun

  Department of Electrical Engineering, Photonic and Opto-Electronic Materials Center (POEM), Princeton University

• LENCHYSHYN Lori

  Department of Physics, Simon Fraser University

• THEWALT Michael

  Department of Physics, Simon Fraser University

• Amour Anthony

  Department Of Electrical Engineering Photonic And Opto-electronic Materials Center (poem) Princeton University

• Mi Qun

  Department Of Electrical Engineering Photonic And Opto-electronic Materials Center (poem) Princeton University

• Lenchyshyn Lori

  Department Of Physics Simon Fraser University

• Thewalt Michael

  Department Of Physics Simon Fraser University

関連論文

• High Temperature (77-300 K) Photo- and Electroluminescence in Si/Si_Ge_x Heterostructures

スポンサーリンク