Parametric Investigation of Si_<1-x>Ge_x/Si Multiple Quantum Well Growth
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概要
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Si_<0.8>Ge_<0.2>/Si multiple quantum welts (3 nm/30 nm) have been grown by molecular beam epitaxy and have been characterized using photoluminescence (PL), secondary ion mass spectrometry, and transmission electron microscopy. A parametric investigation relating the growth conditions to the PL was carried out. The existence of phonon-resolved band-edge PL appears to be strongly related to the background impurity concentration. The connection between phonon-resolved band-edge PL and higher substrate growth temperatures is probably due to the temperature- dependent incorporation of impurities. In the as-grown samples a correlation of the broad PL with platelet density in the quantum wells was observed. The broad PL may be associated with Cr at the platelets since a high temperature (710℃) anneal extinguished the broad PL and caused a reduction in the Cr found in the quantum wells, but had no effect on the platelet density.
- 社団法人応用物理学会の論文
- 1994-04-30
著者
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Thompson P
Naval Research Laboratory
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Twigg Mark
Naval Research Laboratory
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THOMPSON Phillip
Naval Research Laboratory
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GODBEY David
Naval Research Laboratory
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HOBART Karl
Naval Research Laboratory
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GLASER Evan
Naval Research Laboratory
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KENNEDY Thomas
Naval Research Laboratory
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SIMONS David
National Institute of Standards and Technology
関連論文
- Parametric Investigation of Si_Ge_x/Si Multiple Quantum Well Growth
- Time-Resolved Optically Detected Magnetic Resonance of Luminescence from Si/Si_Ge_x Superlattices