Effects of the Variation in the Dose of the Injector Implant on the Endurance Characteristics of Floating Gate Electrically Erasable Programmable Read Only Memory Devices

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概要

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• We have experimentally observed a dependence of the endurance characteristics of floating gate electrically erasable programmable read only memory (EEPROM) devices on the dose of the injector implant. With an increase in the implantation dose, the memory window closure is enhanced. This phenomenon is explained theoretically by calculating the change in threshold voltage and hence, the amount of charge injected through the tunnel oxide during write/erase cycles for different implantation doses in the injector region.

• 社団法人応用物理学会の論文
• 1994-04-15

著者

• Bhattacharyya Anjan

  Department Of Physics Jadavpur University

関連論文

• Effects of the Variation in the Dose of the Injector Implant on the Endurance Characteristics of Floating Gate Electrically Erasable Programmable Read Only Memory Devices

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