Long-Wavelength (1072 nm) Strained InGaAs Quantum-Well Lasers Grown on 1.0°Misoriented (111)B GaAs

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概要

• 論文の詳細を見る

• The operation of InGaAs/GaAs/AlGaAs strained quantum-well lasers 1.0° misoriented (111)B GaAs substrates is reported. The laser structures are grown by molecular beam epitaxy (MBE). Threshold current densities of 164 A/cm^2 at 1072 nm were obtained for broad-area, uncoated devices with cavity lengths of 700 μm.

• 社団法人応用物理学会の論文
• 1994-03-15

著者

• Watanabe Hideo

  Research & Development Center Konica Corporation

• ISHIHARA Akihiro

  Research & Development Center, Konica Corporation

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• Long-Wavelength (1072 nm) Strained InGaAs Quantum-Well Lasers Grown on 1.0°Misoriented (111)B GaAs

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