Epitaxial Growth of CeO_2 Films on Si(111) by Sputtering

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概要

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• CeO_2 films were epitaxially grown on Si(111) substrates by reactive sputtering following the single-crystal CeO_2 seed layer formation by oxygen-reactive solid-phase epitaxy. Formation of metallic Ce layers and oxidation of the layers prior to reactive sputtering was found to be the key process for epitaxial growth of CeO_2 on Si substrates. An Auger electron spectroscopy depth profiling analysis showed that the Ce-Si interlayer was formed after the Ce metal deposition. Reflection high-energy electron diffraction and transmission electron microscopy proved that epitaxial CeO_2 films were grown by reactive sputtering on the seed layers formed by oxidation of Ce metal layers with thickness of 5 to 10 nm. Crystalline quality of the films depended on the sputtering conditions, especially on total sputtering pressure and oxygen concentration. The optimization of the conditions for seed layer formation by oxygen-reactive solid-phase epitaxy and reactive sputtering was an important factor for improving the crystalline quality of epitaxially grown CeO_2 film.

• 社団法人応用物理学会の論文
• 1994-01-15

著者

• Yaegashi Seiji

  Central Research Laboratories Nippon Mining Co. Ltd.

• Yaegashi Seiji

  Materials Laboratory Nikko Kyodo

• Hoshi H

  Japan Energy Corp. Saitama Jpn

• KURIHARA Toshiya

  Materials Laboratory, Nikko Kyodo

• HOSHI Hideo

  Materials Laboratory, Nikko Kyodo

• SEGAWA Hideo

  Materials Laboratory, Nikko Kyodo

• Segawa H

  Materials Laboratory Nikko Kyodo

• Kurihara Toshiya

  Materials Laboratory Nikko Kyodo

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• Low-Temperature Synthesis of YBa_2Cu_3O_ and YBa_2Cu_4O_8 by Sol-Gel Method
• Synthesis of YBa_2Cu_4O_8 Powders by Sol-Gel Method under Ambient Pressure
• Epitaxial Growth of CeO_2 Films on Si(111) by Sputtering

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