High-Gain Collector-Top Ge/GaAs Heterojunction Bipolar Transistors with a Base Layer Fabricated by Suppressing Ga Atom Diffusion at Ge/GaAs Heterojunctions

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概要

• 論文の詳細を見る

• Collector-top Ge/GaAs heterojunction bipolar transistors (HBTs), consisting of an n-type GaAs emitter, a p-type Ge base, and an n-type Ge collector, are fabricated successfully. These exhibit a current gain of 430, the largest among reported collector-top HBTs. Ga atom diffusion into the Ge base layer from the surface of the GaAs emitter layer is suppressed using a two-step Ge growth process, wherein a thin Ge film is grown on GaAs at lower growth temperature prior to normal Ge growth at 500℃. For HBTs with low-temperature-grown (LTG) Ge films of 150Å thickness, the current gain increases monotonically from 45 to 430 with decreasing LTG film growth temperature from 500℃ to 150℃. Insertion of an LTG Ge film lowers the total amount of Ga atoms diffused from the Ge/GaAs heterointerface by one order of magnitude, and reduces both the base width and the doping density of the base layer, resulting in an increase in current gain.

• 社団法人応用物理学会の論文
• 1991-08-15

著者

• Kawanaka Masafumi

  Fundamental Research Laboratories Nec Corporation

• KIMURA Tohru

  Fundamental Research Laboratories, NEC Corporation

• Kimura Tohru

  Fundamental Research Laboratories Nec Corporation

• Sone J

  Nec Corp. Ibaraki Jpn

関連論文

• High-Gain Collector-Top Ge/GaAs Heterojunction Bipolar Transistors with a Base Layer Fabricated by Suppressing Ga Atom Diffusion at Ge/GaAs Heterojunctions

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