Growth of Buffer Layers on Si Substrate for High-T_c Superconducting Thin Films

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We have investigated the crystalline properties and surface morphology of the buffer layers of Y_2O_3, ZrO_2, and Y_2O_3/ZrO_2 on a Si(100) substrate for a superconducting thin film. The results of RHEED and X-ray diffraction indicate the hetero-epitaxial growth of buffer layers on Si(100) substrates. Epitaxial planes of the buffer layers on the Si(100) surface are (110), (100) and (100)/(100) for Y_2O_3, ZrO_2 and Y_2O_3/ZrO_2, respectively. YBa_2Cu_3O_<7-x> thin films have been grown on Si with each buffer layer. The highest critical temperature obtained was 88 K on the Si with the Y_2O_3/ZrO_2 buffer layer.
社団法人応用物理学会の論文
1991-05-15