Precise Reactive Ion Etching of Ta Absorber on X-Ray Masks

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概要

• 論文の詳細を見る

• We investigated the reactive ion etching (RIE) of the Ta absorber on X-ray masks using a mixture of chlorine (Cl_2) and chloroform (CHCl_3) gases. To improve the pattern profiles, we used a gas mixture of chlorine (Cl_2) and chloroform (CHCl_3) which enhances deposition and protects side wall. We consistently obtained vertical side walls (90°±3°) with a Ta-to-resist etch-rate ratio (selectivity) of 7 and pattern edge roughness below 0.02 μm. The transfer accuracy was 0.00±0.04μm (3 sigma) using 40% CHCl_3 and Cl_2 with a gas pressure of 0.2 Torr and power density of 0.8 W / cm^2.

• 社団法人応用物理学会の論文
• 1991-11-30

著者

• NAKAISHI Masafumi

  Advanced Technology Division, Fujitsu Limited

• SUGISHIMA Kenji

  Advanced Technology Division, Fujitsu Limited

• Sugishima K

  Fujitsu Ltd. Kawasaki

• Sugishima Kenji

  Advanced Technology Division Fujitsu Limited

• Nakaishi M

  Fujitsu Ltd. Kawasaki

• Nakaishi Masafumi

  Advanced Technology Division Fujitsu Limited

関連論文

• Transient Photocurrent in Amorphous (As_2Se_3):Te Thin Films
• Isothermal Photocurrent Transient Spectroscopy of Gap States in Amorphous Chalcogenide Semiconductors
• Anomalous Etching Residues of Sputter-Deposited Ta upon Reactive Ion Etching Using Chlorine-Based Plasmas
• Precise Reactive Ion Etching of Ta Absorber on X-Ray Masks
• Precise Reactive Ion Etching of Ta Absorber on X-Ray Masks : X-Ray Lithography

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