Amorphous Silicon Thin-Film Transistors with SiO_xN_y/SiN_x Gate Insulators

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概要

• 論文の詳細を見る

• A double layer of plasma chemical vapor deposition SiO_xN_y and SiN_x was applied to the gate insulator of an amorphous silicon (a-Si) thin-film transistor (TFT). When a thin SiN_x layer is inserted between the a-Si of an a-Si TFT and the SiO_xN_y gate insulator, the density of trapped charges is found to decrease less than for a gate insulator with only SiN_x, when the thickness of SiN_x is decreased. No deterioration was observed in the switching characteristics of an a-Si TFT with a SiO_xN_y/SiN_x gate insulator, compared with a-Si TFTs with SiN_x gate insulators commonly used in liquid crystal displays. The density of trapped charges is related to the threshold voltage shift.

• 社団法人応用物理学会の論文
• 1990-02-20

著者

• Hiranaka Kouichi

  Fujitsu Laboratories Ltd.

• YAMAGUCHI Tadahisa

  Fujitsu Laboratories Ltd.

関連論文

• Amorphous Silicon Thin-Film Transistors with SiO_xN_y/SiN_x Gate Insulators
• Effects of the Deposition Sequence on Amorphous Silicon Thin-Film Transistors

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