Morphology of Microdefects in As-Grown Thinned Silicon Crystals Observed by Synchrotron X-Radiation Plane-Wave Topography
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概要
- 論文の詳細を見る
In order to reveal more minute microdefects in as-grown CZ silicon crystals, thinned crystals as thin as the order of the extinction distance have been successfully observed by ultra plane-wave topography using synchrotron X-radiation. Various kinds of microdefects reveal themselves only in the thinned region. Using thinned crystals for plane-wave topography is essential for the present experiment. Observed morphologies of microdefects are classified into five categories. One of the observed microdefects has an image extinction rule suggesting a specified strain field around it. The morphology of microdefects has been described in detail.
- 社団法人応用物理学会の論文
- 1990-02-20
著者
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IMAI Masato
R & D Division, Komatsu Electric Co. Ltd.
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Chikaura Yoshinori
Department Of Applied Science For Integrated System Engineering Graduate School Of Engineering Kyush
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IMAI Masato
R & D Division, Komatsu Electronic Metals Co., Ltd.
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