Study of Thin Films of Co-In-Se-Te System Grown by Triode Sputtering

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Structural, electrical and optical properties and composition of thin films of Cu-In-Se-Te system grown by sputtering have been studied relating the growth conditions to film composition. The crystalline phases observed are tetragonal chalcopyrite type and a new metastable cubic phase, as determined by transmission electron diffraction (TED). The film optical absorption coefficients present two or three inflection regions corresponding to several energy gaps, two direct and one forbidden-direct gap. The energy gap values depend on composition through Cu/In and Cu/(Se + Te) ratios. The first direct gap lays in the 0.76-1.42 eV range and the forbidden direct one in the 1.46-2.23 eV range. Thermal treatments between 150-4O0℃ have been done in still N_2 atmosphere with Se and Te sources at the same temperature. This annealing does not noticeably vary the initial composition of the films.
社団法人応用物理学会の論文
1992-11-15