Deposition in Dry-Etching Gas Plasmas

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概要

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• Polymer deposition on Si and SiO_2 surfaces has been investigated in CH_2F_2, CHF_3, CF_4, and CHCIF_2 gas plasmas, using a microwave plasma etching system. The dependence of the deposition rate on gas pressure, RF bias power, and substrate temperature was measured at a temperature between -120℃ and 150℃. The deposition rate increased with decreasing temperature in CH_2F_2, CHF_3, and CHCIF_2 plasmas. The deposition of polymers occured only below -60℃ in the CF_4 plasma. The obtained dependence of the deposition rate on gas pressure was examined in terms of the volume of adsorbed particles. X-ray photoelectron spectroscopy measurement showed that the number of bondings between C and F atoms in deposited polymers increases with decreasing temperature and RF power, and increasing gas pressure.

• 社団法人応用物理学会の論文
• 1992-06-30

著者

• Arai Shin

  Central Research Laboratory Hitachi Ltd.

• Tsujimoto Kazunori

  Central Research Laboratory Hitachi Ltd

• Tsujimoto K

  Hitachi Ltd. Tokyo Jpn

• Tachi Shin'ichi

  Central Research Laboratory Hitachi Ltd.

関連論文

• Precise CD-Controlled Gate Etching Using UHF-ECR Plasma
• Mechanism of Radiation Damage in SiO_2/Si Induced by vuv Photons : Beam-Induced Physics and Chemistry
• Mechanism of Radiation Damage in SiO_2/Si Induced by vuv Photons
• Reduction in Microloading by High-Gas-Flow-Rate Electron Cyclotron Resonance Plasma Etching
• Deposition in Dry-Etching Gas Plasmas
• Low-Temperature Microwave Plasma Etching of Crystalline Silicon

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