High-Performance Pattern Placement Metrology on Dynamic Random Access Memory Layers of 0.25 μm Technology

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概要

• 論文の詳細を見る

• Pattern placement metrology is a key function in the evaluation of new manufacturing technology and processes. For future dynamic random access memory (DRAM) generations, ground rules of less than 0.25 μm must be achieved. This paper presents the results of an investigation of the Leitz LMS 2020 laser metrology system from Leica for pattern placement metrology for different layers of DRAM and X-ray mask fabrication processes. The results demonstrate clearly that the new Leitz LMS 2020 tool is well suited for pattern placement control of typical CMOS process wafers and X-ray masks with 30 nm accuracy.

• 社団法人応用物理学会の論文
• 1993-12-30

著者

• Huber H.-l.

  Fraunhofer-institut Fur Mikrostrulturtechnik Dillenbutger Str

• Huber H‐l

  Fraunhofer Institut For Siliziumtechnologie (isit)

• Blasing-bangert Carola

  Leica Lmw Gmbh

• Huber Hans-ludwig

  Fraunhofer Institut For Siliziumtechnologie (isit)

• TRUBE Jutta

  Fraunhofer Institut for Siliziumtechnologie (ISiT)

• RINN Klaus

  Leica LMW GmbH

• ROTH Klaus-Dieter

  Leica LMW GmbH

関連論文

• High-Performance Pattern Placement Metrology on Dynamic Random Access Memory Layers of 0.25 μm Technology
• Silicon Membrane Mask Blanks for X-Ray and Ion Projection Lithography : Lithography Technology
• Silicon Membrane Mask Blanks for X-Ray and Ion Projection Lithography

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