Fabrication of Metallic Structures in the 10 nm Region Using an Inorganic Electron Beam Resist

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概要

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• In order to make the sub-10 nm region accessible to lithography, an ultrahigh-resolution electron beam resist has been developed. This inorganic and self-developing resist is based on AlF_3-doped LiF films. The resolution limit is ≈3 nm lines & spaces. This result is in excellent agreement with a rule which gives a correlation between resolution and threshold energy of a resist. The sensitivity is sufficient for the fabrication of complex mesoscopic devices. The problems concerning pattern transfer are discussed. As a first result, metallic structures with lateral dimensions down to 10 nm have been obtained using a lift-off technique.

• 社団法人応用物理学会の論文
• 1993-12-30

著者

• Langheinrich W

  Univ. Cambridge Cambridge Gbr

• LANGHEINRICH Wolfram

  Institute of Semiconductor Electronics, Aachem Technical University

• BENEKING Heinz

  Institute of Semiconductor Electronics, Aachem Technical University

• Beneking Heinz

  Institute Of Semiconductor Electronics Aachem Technical University

関連論文

• Fabrication of Metallic Structures in the 10 nm Region Using an Inorganic Electron Beam Resist

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