The Anisotropic Plasma-Enhanced Chemical Vapor Deposition SiO_2/Spin-on Glass Process for 0.35 μm Technology

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概要

• 論文の詳細を見る

• A new plasma enhanced chemical vapor deposition (PECVD) oxide is proposed to form an anisotropic SiO_2 film with ultra low sidewall step coverage for the intermetal dielectric (IMD) process. This oxide is named anisotropic plasma oxide (APO). In the APO technology, the anisotropic deposition is achieved by reducing the O_2/TEOS (tetraethylorthosilicate) feed ratio in current PECVD process. The APO sidewall step coverage can be lowered to 20% compared to 65% for the conventional PECVD oxide. Reflective index, measured by ellipsometry method, indicates that the APO film is Si-rich. High deposition rate and low film stress show the APO is suitable to the IC production. This technology is successfully applied to the 0.5 μm 16 M dynamic random access memory (DRAM) products and is expected to apply to 0.35 μm ULSI technology.

• 社団法人応用物理学会の論文
• 1993-12-30

著者

• Chen L‐j

  National Cheng‐kung Univ. Tainan Twn

• Chen Kuang-chao

  Department Of Process Technology Development Erso

• Chen Kuang-chao

  Department Of Obstetrics And Gynecology Chang Gung Memorial Hospital

• CHEN Lai-Juh

  Department of Process Technology Development, ERSO

• HSIA Shaw-Tzeng

  ITRI

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• The Anisotropic Plasma-Enhanced Chemical Vapor Deposition SiO_2/Spin-on Glass Process for 0.35 μm Technology

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