The Effect of Gaps in Markle-Dyson Optics for Sub-Quarter-Micron Lithography

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概要

• 論文の詳細を見る

• The feasibility of Markle-Dyson optics has previously been demonstrated experimentally, using a prototype system in which the wafer is in contact with the mask. However, for semiconductor manufacturing, a gapped system is required. The introduction of a gap creates spherical aberration, which must be compensated. Two possible techniques for doing this are described. The first is to choose suitable materials for the Dyson lens and the mask, and this can work well unless the gap is much greater than 25 μm, in which case the residual aberration is unacceptably large. For this reason, the second compensation technique, the use of an aspheric mirror is preferred, since it affords complete correction. A gapped prototype system using an aspheric mirror is under experimental investigation. In this, the gap is controlled by a capacitance gauge, and the gauge is calibrated using an interferometric technique.

• 社団法人応用物理学会の論文
• 1993-12-30

著者

• Owen G

  Hewlett Packard Co.

• OWEN Geraint

  Hewlett Packard Co.

• GRENVILLE Andrew

  Stanford University

• BUNAU Rudolf

  Stanford University

• JEONG Hwan

  Ultratech Stepper Inc.

• MARKLE David

  Ultratech Stepper Inc.

• PEASE R.

  Stanford University

• Jeong H

  Ultratech Stepper Inc.

関連論文

• The Effect of Gaps in Markle-Dyson Optics for Sub-Quarter-Micron Lithography
• Optimization of Pupil Filters for Increased Depth of Focus
• Demonstration of Secondary Electron Detection using Monolithic Multi-Channel Electron Detector

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