Selectively Disorder Activated Raman Scattering in Silicon Films

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概要

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• Raman spectra have been registered and discussed, for a series of silicon films grown by low pressure chemical vapor deposition (LPCVD). The amorphous-microcrystalline phase transition of the samples has been investigated, as a function of the deposition and annealing parameters. These results have been compared to transmission electron microscopy (TEM) observations on these films. A Raman line near 500 cm^<-1> has been also evidenced on the low frequency side of the optical vibration mode of silicon, in the as-grown samples and in the phosphorusdoped ones; we assign this line to a selectively disorder-activated mode, due to the numerous stacking faults present in the microcrystalline films.

• 社団法人応用物理学会の論文
• 1993-04-15

著者

• Fabre Francois

  Laboratoire De Physique Des Solides

• BANDET Jacqueline

  Laboratoire de Physique des Solides

• FRANDON Jean

  Laboratoire de Physique des Solides

• MAUDUIT Bernadette

  CEMES-LOE

• Bandet J

  Esa Toulouse Fra

関連論文

• Selectively Disorder Activated Raman Scattering in Silicon Films
• Raman Analysis of Wurtzite Silicon Islands in Silicon Oxide Deposited in N_2O-SiH_4 Plasma Process

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