A New Method to Determine Effective MOSFET Channel Length

概要

論文の詳細を見る
An accurate and convenient method to determine an effective MOSFET channel length is proposed. This method is based on a computer aided evaluation of an intrinsic MOSFET channel resistance without using special test devices. N-channel silicon-gate MOSFETs were fabricated, and the channel length and its range of device to device scatter were evaluated . To define an effective channel, a simple model of the source-drain (S-D) diffusion layer is proposed. This model shows that the expected transition layer resistance between the S-D diffusion layer and the inverted channel layer agrees with the experimental results. The accuracy of this method is also discussed. It is found to be better than 0.1 μm.
社団法人応用物理学会の論文
1979-05-05