Microzone Recrystallization of InSb Thin Films for Hall Effect Magnetic Heads

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概要

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• A new processing method is proposed for fabricating indium antimonide thin film Hall elements on ferrite substrates applicable to high singal-to-noise ratio Hall effect magnetic heads. The procedures include (1) coating the substrate with a thin glass layer containing 12 mol% alumina, then evaporating InSb film on it, (2) microzone-recrystallization of the film in a helium atmosphere containing 〜300 ppm oxygen, and (3) lapping the film to obtain a desired thickness (2μm) and smooth surface. The film thus formed, having the grain size of 〜3 mm×0.5 mm and dislocation density of 〜10^7 cm^<-2>, shows electron mobility of 60, 000cm^2/V_s, Hall coefficient of 350 cm^3/C at 300K (comparable to those of the purest single crystal) and remarkably low current noise in the audio frequency range.

• 社団法人応用物理学会の論文
• 1978-02-05

著者

• YAMAMOTO Naoki

  Central Research Laboratory, Hitachi Ltd.

• Kotera Nobuo

  Central Research Laboratory Hitachi Ltd.

• Shigeta Junji

  Central Research Laboratory Hitachi Ltd.

• OI Tetsu

  Central Research Laboratory, Hitachi, Ltd.

• NAKASHIMA Muneyasu

  Central Research Laboratory, Hitachi, Ltd.

• Oi Tetsu

  Central Research Laboratory Hitachi Ltd.

• Nakashima Muneyasu

  Central Research Laboratory Hitachi Ltd.

• Yamamoto Naoki

  Central Research Laboratory Hitachi Ltd.

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