Structure and Electrical Properties of Titanium Nitride Films

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概要

• 論文の詳細を見る

• Metallic titanium, in nitrogen atmosphere with specified pressures(p_N)ranging from 10^<-6> to 10^<-4> Torr, was evaporated on glass substrates heated at temperatures (T_s) between 300 to 500℃. X-ray analysis revealed that the films were composed of α-titanium, distorted titanium phase, amorphous phase, and TiN. The distorted titanium phase was found to extend to a high concentration of nitrogen (x=0.5). In particular, the specimens evaporated at p_N=2.0×10^<-5> Torr and T_s=500℃ had maximum resistivity of 270 μΩ-cm and a very small negative value of the temperature coefficient of resistance (0 to -20 ppm/℃) for an extended range of temperatures (-190 to 200℃). The excess resistivity of the distorted titanium phase can be mainly interpreted in terms of two kinds of carrier scattering, one due to nitrogen atoms randomly distributed at vacant interstitials, another attributable to grain boundaries involved.

• 社団法人応用物理学会の論文
• 1978-01-05

著者

• Azuma Koichi

  Research Institute Of Electronics Shizuoka University:(present Address)matsushita Electric Industria

• Igasaki Yasuhiro

  Research Institute Of Electronics Shizuoka University

• Muto Tokio

  Research Institute Of Electronics Shizuoka University:(present Address)tokyo Electrical Engineering

• Mitsuhashi Hiroji

  Research Institute Of Electronics Shizuoka University

関連論文

• Effects of the Preparation Conditions on Indium Content in As-grown In-Se Films by Electrodeposition
• X-Ray Diffraction Data on Evaporated Organic Films of Fatty Acids
• Structure of Ti-Fe Alloy Films Prepared by Composite-Cathode Sputtering
• Structure and Electrical Properties of Titanium Nitride Films
• Electrical Properties of Ti-Fe Films

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