Effects of Trichloroethylene Addition on the Thermal Oxidation of Silicon at 1200℃

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概要

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• The thermal oxidation kinetics of silicon at 1200℃ in the presence of small amounts of trichloroethylene (TCE) has been investigated. Both the parabolic (B) and linear (B/A) rate constants are increased in this environment over those of standard oxidation without TCE. The constant B/A increases to a maximum and then decreases with increasing TCE concentration, while B shows a monotonic increase. The enfluence of TCE addition on the dielectric strength of the resulting SiO_2 films has also been studied. The breakdown statistics were abserved to be significantly improved by the incorporation of TCE.

• 社団法人応用物理学会の論文
• 1978-01-05

著者

• Hattori Takeshi

  Semiconductor Development Division Sony Corporation Research Center

関連論文

• Effects of Trichloroethylene Addition on the Thermal Oxidation of Silicon at 1200℃

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