Mechanism of Carrier Injection and Light Emission in Cd_<1-x>Mg_xTe p-n Junctions at Room Temperature

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Electrical and electroluminescent prorerties in P-diffused Cd_<1-x>Mg_xTe (x=0, 0.2, and 0.35) p-n junction diodes were measured at room temperature and are discussed in detail by using the theory for injection-recombination kinetics with emphasis on radiative recom bination. The I-V characteristics of these diodes show an exponential behavior of the form I=I_0exp (qV/mkT), where m=2 at low biases and m<2 at high biases. The change in the slope can be explained by the space-charge recombination current through deep centers. An analysis of the bias dependence of the light emission shows that the diffusion current dominates the current concerning radiative recombination.
社団法人応用物理学会の論文
1969-07-05