Preparation and Electroluminescent Properties of p-n Junctions in Cd_<1-x>Mg_xTe

概要

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Solid solutions of MgTe and CdTe were prepared throughout the range 0〜0.35 mole fraction MgTe. P-n junctions were formed from CdTe, Cd_<0.8>Mg_<0.2<Te and Cd_<0.65>Mg_<0.35>Te by diffusing P under Cd atmosphere for 10 to 72 hours and electroluminescent properties were investigated at room temperature. The diode with x=0.35 emitted visible red light (〜6800 Å) with external quantum efficiency of 2×l0^<-6> for 10mA at 300°K. The emission spectra of Cd_;t:1-x>Mg_xTe diodes(x≠0) are similar to the spectra due to Schoen-Klasens type transition as supposed in CdTe diodes. Capacitance measurements, current-voltage characteristics and transient effect measurements imply that, at high current density (〜100 A/cm^2), diffusion current rather than the recombination current in the space-charge region relates to radiative recombination.
社団法人応用物理学会の論文
1969-03-05