Surface Charge Wave Propagation and Proposed Devices

概要

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The properties of surface charge waves drifting on two sheets of semiconducting films were investigated theoretically by solving the Poisson's equation with a practical boundary condition. The analysis was done for two configurations. One, for a tapered dielectric thin film sandwiched between two semiconducting films and the other for a thin dielectric film with a nonuniform dielectric constant sandwiched between two sheets of semiconducting films. Calculations showed the propagation power should increase when the distributed capacitance between the semiconducting films gradually decreased in the propagation direction, even for a constant amplitude of the surface charge wave. When the distributed capacitance is uniform, a negative differential conductivity in the semiconductor is shown to give energy to the surface charge wave and the growth rate was shown to be smaller than that for bulk space charge in usual GaAs devices. The transit time effect or the surface charge wave has been found to produce an inductive impedance for a semiconductor film over a certain range of the transit angle.
社団法人応用物理学会の論文
1969-02-05