Silicon N-Channel Normally-Off Insulated-Gate Field-Effect Transistors

スポンサーリンク

概要

• 論文の詳細を見る

• Characteristics of n-channel normally-off insulated-gate field-effect transistors (IGFETs) are studied theoretically and experimentally. The obtained theoretical drain current is as follows:- I_D=-I_<DOe^q(V_<GS>-V_<TO>)/mkT>・(1-e^<-q^V>DS/^<kT>) where I_<DO> is a constant, V_<GS> and V_<TO_> are gate potential and the threshold voltage to make the onset of inversion, V_<DS> is drain to source bias and m is reciprocal slope which is numerical constant determined by the parameters of the given FET. As predicted by the theory, experimental log I_D vs V_<GS> relation exhibits excellent linearity in the low level. The reciprocal slope and the thereshold voltage for the intrinsic drain current are influenced by the surface states as much as by the fixed charges located at the interface. P-type (100) oriented substrate wafer of u_p more than 14 is needed to make n-channel normally-off IGFET in the present Technique, where u_p is a normalized Fermi potential of the substrate.

• 社団法人応用物理学会の論文
• 1968-08-05

著者

• Ohwada Atsushi

  Semicodductor Engineering Department Tokyo Shibaura Electric Co. Ltd.

関連論文

• Charge Transport Phenomena in MOS System
• Silicon N-Channel Normally-Off Insulated-Gate Field-Effect Transistors
• Highly Sensitive Hall Generators

スポンサーリンク